TEA Systems

TEA Systems and SPIE present
"Lithography Control & Characterization"
SPIE Continuing Education
#SC621 Sunday Feb. 19,2006 8:30 am to 5:30 pm

Home | Products | Applications | News | Education | Services | Publications | WhitePapers | Contact TEA | Company

    

Our repertoire of metrology tools has grown in the past five years to include phase, scatter and functionality from instruments never before available. If you wish to understand what they are, how they work and their uses in process setup/control and characterization then this course if for you.

Course includes B&W printed notes PLUS an interactive, full color CD-ROM with supplementary materials for the cost of $390 to SPIE members.

Proceeds Benefit SPIE.

Please sign up using the Advance Technical Program from SPIE sent to you in the mail or in the registration area at the show.

More details at the TEA Systems Educations web-page

Course Abstract

Includes printed handouts and interactive CD-ROM.

How ready are we to efficiently use the new metrics of film thickness, side-wall angle, profile, line-edge-roughness and focus? These are all variables familiar to us but never before have they been provided so abundantly and provided in so many formats! A decade ago many lithographers addressed the needs of production and process development with little or no automated metrology. Today it’s common to have up to six or more types of metrology available for providing the raw data needed to control operations and adjust for product or process changes.  

Lithographers work in an industry that has lived by the precepts of statistical control. This course addresses advanced techniques for production control and tool characterization/ matching using focus, overlay and feature profile models. Models and their interactions for metrology, aberrations, process window and distortions will be addressed. Through theory, statistics and real data examples we will consider when to apply each as well as the advantages and potential pitfalls of the each technique. The course addresses and develops process, metrology and spatial models to measure these interactions from a control standpoint using both classic metrics and new techniques in focus, scatterometric and CD-SEM data implementation.

 LEARNING OUTCOMES

After completing this course, attendees will be able to:

  •    define the strengths and pitfalls of CD-SEM, optical, scatter and ellipsometric automated metrology

  •   describe the similarities, differences, strengths and weaknesses of various focus measurement techniques

  •   apply spatial models to derive process, toolset, metrology and wafer contributed perturbations

  •   define and measure the influence of various aberration classes on the film, profile, process window, overlay and Critical Dimension performance

  •   describe the similarities and differences of machine tuning, control and matching

  •   derive control specific spatial models for process and tool tuning

  •   classify potential process error sources in terms of tunable subassembly and contributor algorithms

  •   measure the contribution of site dependent, lens, slit, scan and metrology error sources in your equipment set

  •   define optimum machine models for your equipment set and identify their tuning critical components

  •   quantitatively compare system performance between toolsets, reticle and process parameters for process control, process setup and tool matching

  •   implement optimum model, data and equipment validation techniques for production control parameters

 INTENDED AUDIENCE
This course is intended for experienced engineers in lithography, process, tool characterization and control. Attendees should possess a good understanding of Optics and Lithography. Some familiarity with data gathering from overlay, scatterometry and CD-SEM techniques is assumed.

COURSE LEVEL
Advanced

COURSE LENGTH

Full day (.65 CEU)

INSTRUCTOR

Terrence Zavecz  founded TEA Systems Corporation and has been it’s president since 1988. His experience extends over 30 years of equipment and process R&D/manufacturing in e-beam photomask technology, optical lithography and device manufacturing in the US and abroad. Zavecz has participated at various levels in development of processes and equipment including numerous modeling tools such as the current Weiring Wavefront Engineering toolset and past offerings that include the mask-maker’s MARKET™ program and MEBES diagnostics, KLA Instrument’s KLASS™ software and wafer inspection tools, LIMET, OASnt and APC software tools for overlay, focus analysis.

TEA Systems

TEA Systems offers products to model films, photomasks, wafers, feature profiles, process and lens data for characterization and setup of semiconductor design, simulators, tools and the process.

 

TEA Systems, a privately held corporation since 1988, specializes in advanced, intelligent modeling of the semiconductor process and toolset. Products from TEA allow the user to decouple process, tool and random perturbations for enhanced process setup & control.

TEA Systems products include:

Weir PSFM: Full-wafer/field/scan analysis tool for FOCUS derived from proprietary defocus sensitive features.

Weir PW:    Reticle/Full-wafer/field/scan analysis for any metrology with advanced process window capabilities for both wafer and photomask control.

LithoWorks PEB: A tool to link and correlate profile, film and critical element control to thermal reactions such as PEB and ChillPlate

Weir DMA:   Macro Automation interface for Weir PSFM and Weir PW for external program calling, automated data gathering or one-button analysis of commonly used sequences. Includes data trending and web interface.

 

Copyright 2005,2006 TEA Systems Corporation, All rights reserved. Legal

 

TEA Systems Corp. | Tel: +1 610 682 4146
65 Schlossburg St., Alburtis, PA USA

 

If you do not wish to receive email announcements from TEA Systems, simply reply
to this message, and in the body of the message type: Cancel