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Weir
PW: Using a Focus-Exposure matrix to calculate process focus and depth-of-focus
uniformity
Weir
PW Product Applications
See Also:
Weir PW Brochure,
ML06 Bossung Focus
Related Tutorials:
Mapping Dose, EL% and DoF Uniformity
User's Area - Requires Logon:
Other tutorials in the user's section:
White Paper Tutorials
Contact
TEA Systems for a Weir Demonstration or Logon
Process Setup, Feature Profile
Control and OPC Qualification
using exposure-tool and process
measurements of feature-derived focus uniformity
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Why use device
features rather than special test structures to measure IntraField focus
uniformity?
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How can I
easily qualify new reticle designs and monitor in-production process changes
and lens degradation?
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What is the
optimum IntraField feature uniformity that I can expect from this reticle
and exposure tool?
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How does
process-window setup vary across the full exposure field?
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How does
Depth-of-Focus vary across the exposure field?
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What are
realistic process control limits for this reticle design?
Keywords:
DoF, Focus, Depth of Focus, Uniformity, IFD, process setup, metrology, model,
Locus of Focus, LoF, Effective Dose, Exposure-Dose,
lithography cell, HTML Reporting
Objectives
- The advantages of deriving focus from product features
rather than patented specialty test patterns.
- Data import and setup using Weir PW
- One site performance comparison to full-field response
- Converting feature information to Focus and
Depth-of-Focus uniformity across the field
- Realistic process window designation
- Derived feature uniformity without focus perturbations.
- Final Reticle design qualification and validation without
focus errors
- Examination of focus response with Weir PSFM
Sections
Introduction
Focus
Metrics derived from Weir PW
Analysis of Weir Derived Focus Metrics
Weir PW Hints on Usage
TEA Systems Information
References
Process Response
Surface
The interpretive
curve of feature size as a function of focus error was first described by John Bossung in 19771.
The observed response consists of a 2nd order change in feature size that is
symmetric about the optimum tool focus for the curve as shown in figure 1. A
curve is plotted for each exposure-dose of the data; the family of curves in
figure 1 represent a two dimensional process response of the feature to both
focus and dose.
At the feature's
optimum dose the response-curve
of an aberration free, optimized process displays no variation focus error over
the depth of focus of the lens as shown in curve "A". Curve "A" is the
IsoFocal Dose of
the process. In practice perturbations such as lens aberrations and photoresist
thickness limit the extent of the IsoFocal region.
The IsoFocal Bias is the
difference between the curve's exposure-dose and the IsoFocal Dose. The 2nd
order response of the dose-curve increases in absolute magnitude as the
isofocal-bias increases.
The "B-curve" shown
in figure 1 connects the points where the change in slope of each dose-curve
equals zero. This B-curve plots the optimum-focus ridge for the response surface
and is called the locus-of-focus (LoF). Ideally the LoF is a straight and
vertical line, however optical system perturbations from aberrations and
electro-mechanical tool interactions
will contribute to deform the path as shown in the figure.
When a feature size
is specified by a chip-designer the tolerable upper and lower control limits for
the process must also be specified. Ideally the limits are set by the device
design but practicality has shown that process and reticle characteristics will limit
the process-capable region. The region that defines the Depth-of-Focus (DoF) and
Exposure Latitude (EL) under which the design specification
can be met is called the Process Window. Figure 1 shows that each of these
parameters will interactively change as the effective dose on the feature
varies. We can also see that the size of the process window is optimized near
the IsoFocal Dose.
Feature Focus
Response
Wavefront focal
plane metrology from test structures used to calculate lens aberrations will not
exhibit the same response as the production lithographic feature. Specialty
test patterns, such as
the Phase-Shift Focus Monitor (PSFM) concentrate on measuring the optimal focus
for the lens2.

In a simplistic
explanation, the true focus of a lens, shown in figure 2 for an ideal ray-trace
point with coherent illumination and an object at infinity, will focus at a
point spot. This is the focus that specialty structures, such as the
phase-shift focus monitor, attempt to measure.
In contrast, the ray-bundle of a resolvable feature
by the lens system will focus into a cone whose width is determined by system
diffraction and aberration signature interactions with the feature's wavefront.
The feature
therefore experiences a broader range over which it is "in-focus”. This is the
focus measured by the Bossung curve analysis.
Another point for
consideration lies in the location of the feature on the exposure field. Local
best-focus and feature profile response will vary because of intra-field
variations in patterning on the mask, photomask distortion due to heating and
clamped-constraints, lens-slit aberrations, scan distortion and the effective local dose. Each exposure tool and reticle combination
exhibits a focus and dose uniformity signature that is stable unless
process wear-and-tear has induce mechanical drift in the tool.
Signatures can also change locally in the field when lens aberration degradation
is introduced with the onset of localized lens damage from the actinic
radiation forming localized areas of variation in the index of refraction,
called "color centers", that increase in magnitude with exposure.
The implications of
varying effective best-focus and dose across the exposure field upon the process
window now becomes clear. Simulations or measurements of the process window for a
single site on the exposure only vaguely approximate the true production
process window. Unanticipated variations in production usage, reticle manufacture and equipment
performance have a significant impact upon the window.
Advantages of
Feature-Based Focus Analysis
If the objective is
to measure lens aberrations that can be used in a simulator to calculate an
idealized process response then the specialty test patterns for focus and the techniques they
employ should be used. However calculating focus response from the
process-feature response surface is preferred if a lithography cell-specific
analysis is desired. This latter case is most often encountered during the final
stages of process setup, during production control/maintenance and when a
reticle is being qualified for initial or periodic performance evaluations.
Whole-field measured
process window performance not only customizes production to the lithography cell
but can be the most effective monitor of pattern quality, process drift and
reticle Optical Proximity Correction (OPC) performance available
to the engineer.
Data from a new metrology
recipe is first imported into the Weir Main interface rather than Weir PW. Here the exposure
layouts for focus, dose, scan direction, NA and PC are first derived from the
data or manually specified by the technician using the software's interactive graphic interface. The user can then save
the layout into the Weir Layout Library. Figure 3 shows the menu interface for
saving and applying the exposure layout to any dataset from within Weir Main. A
similar menu for it's application exists in the other Weir interfaces.
Any metrology
vendor's format data can be imported into the Weir PW interface shown in figure
4. The Weir Main interface does not need to be used if the data includes the
exposure layout information. After import and conversion, data is stored in the
Weir PW standard workbook format.
Data Selection
Interface

The Weir data workbook
contains a primary data sheet as well as site and header information sheets for the
layout. The workbook will also eventually contain analysis reports plus additional data
sheets. The calculated Full-field focus will be stored in one of these
datasheets and listed in the datasheet combo control located in the upper right
of the interface shown in figure 4. To load a secondary datasheet, simply select
it from this control. We will discuss this in more detail in the next section.
Raw Metrology
as well as Weir Workbook data can be directly imported into Weir PW. As
in the "Weir Main" interface, the "File" menu provides access to the Weir Layout
Library for one-click updates of the exposure layout when needed.
The controls at the
top of this page provide automated data subset selection prior to analysis. In
the instance shown in the figure the "BCDv" metrology variable is used to limit
the acceptable range of analysis data by restricting "BCDv" variation to points that
lie between 50 and 145 nm. This four-field control segment is located in the right-central
portion of the interface shown.
Variable selection is simply a matter of choosing the
variable from the drop-down combo. and entering a "Max" and "Min" range
restriction. Data points will be culled when the "Select Data" command button is
pressed and the number of points removed will be displayed on the command button
immediately above the drop-down variable combo. The command button, in this
example, is also reporting that 51 data points were removed from the raw data
using this control.
Pressing this command button, located immediately
above this combo, will plot a histogram of the selected variable to assist in the
proper selection of range limits.
The mouse can also
be used to box-in and cull data points using either the wafer or field plots
shown. selecting a field-site, from the left-side graphic, will remove all
occurrences of the site from the data. Selecting data on the wafer plot will
remove individual data points for selected or all wafers in the data. Data
points are never actually "deleted" and can always be recovered using the mouse
popup menu or by re-specifying the data selection in this interface.
Process Window
Setup
To begin the
Best-Focus Analysis, select the Process Window tab and the interface shown in figure 5 will
appear. The thee images of
the interface in figure 5 show only the top-half of the screen. The output results and
graphics as well as the analysis calling-tabs are located below this region as
shown in figure 6.
The Process Window (PW) interface has
four setup tabs, the first of which provides additional data culling and
site-selection as shown in the lower half of figure 5. The "Setup" tab
provides the variable and control limit selection utilities (upper right of the
figure).
Simply check a
variable to include it in the analysis. Optionally press the yellow "H" command
button to display a histogram of the variable. The "R" command will reset the
control-limit parameters to those of the suggested variable statistics.
In this analysis the
user has entered a 10% Exposure Latitude (EL) that will be calculated for the
Maximum and Minimum control-limits of each variable. The target size for the BCDv
variable has been set to 96 nm.
Analysis Options are
set using the 5th tab's interface shown in the left-side of the figure. We will
be conducting a "Focus" analysis to determine Best Focus, DoF and Feature
uniformity at Best Focus. A "Medium" analysis precision has been selected and the curves will
be fit to a "Focus Polynomial" as shown by the selection of the "Focus
Response" option button
control.
When calculating Best Focus the simple "Focus Polynomial" should be
selected rather than the Process Window algorithm. None of the existing "Process Window" surface algorithms properly
deal with lens and scan-stage artifacts and an analysis performed will
average-out any of these perturbations that we are attempting to calculate.
As a final step in
the setup, the field
sites included in the data are shown on the right side of the "Data Selection"
tab, shown in the lower right side of figure 5. This figure shows a selection with
"All" sites selected for analysis and the corresponding field-layout
graphic has all of it's sites highlighted.
To select individual
sites, set the option button to "One", the site nearest the center of the field
will be automatically selected, it's location on the graphic will be highlighted to the larger
square shown here and it's site-number will be checked in the listing to the
left of the graphic. An example where two sites have been selected is shown in
figure 6. You can select additional sites either by checking the site
number or by moving the mouse over the graphic until an "X" appears over the
site. Click on the "X" to either select or de-select it from the list.
Begin the
Focus-Response analysis by pressing the "Focus" tab to the left and below
this area of the interface; this area is shown in figure 6.

Resulting Plots & Data
A typical "BCD v
Focus" plot for two field sites is shown in figure 6 for the sites mapped in
the field-schematic on the lower right of the figure. This feature shows a BestDose at 20.5 mj/cm2
and a DoF of -0.257. Note the asymmetric curvature and 2nd order slope variation suggesting
aberrations present in the system.
It's a fact of the state of the technology
that aberrations are seen in all exposure tools when the response surface
for the full-field is plotted. These perturbations will bias the optimum
setup conditions for each lithography cell.
Combining all 36
sites in this type of plot does not provide much more visual information however
the next section will provide a means of performing an extended analysis.
Several reports are also created and stored in spreadsheets of the data Workbook
and can be easily found by clicking on their names in the "Index" spreadsheet.
Each report can be edited and annotated by the user and saved as an HTML file
to any reporting website.
These reports are
summarized in the table below and can also be viewed in the data's
Weir
Data Workbook.
|
Focus Report spreadsheets saved in the
Weir Workbook |
| FocusResponseReport |
Formal report summarizing the analysis. Includes setup, culling
information and IsoFocal Dose for each site. The report also presents a statistical
summary of the Best Focus, Feature Size and DoF distributions at each
Dose. |
| FocusResponse |
Summary of Best Focus and the Feature Size @ Best
Focus for each site. This is a good tool for measuring the influence of poor reticle-site and
OPC performance. |
| FocusResponseSum |
A summary of each site's feature size, Best Focus and
DoF including their IntraField Deviation (IFD) for all doses. |
| BestFocusData |
A data sheet
that can be analyzed and modeled in Weir PW for the optimum feature
size, Focus and DoF. One best-focus field for each dose value is created.
The variation of full-profile feature response across experiment range
and it's smaller process window can be directly analyzed.
Feature
sizes in this data set have their focus-error contributed components
removed. The exposure fields are effectively flattened by reporting the
feature-size at the best focus for each site. The Field values at the IsoFocal Dose are therefore the best
estimate of achievable feature IFD and reticle size that can obtained
for this reticle, process and exposure tool. |
| RawFocus |
A data sheet that can be modeled in Weir PSFM
containing only focus-error data. Four separate focus models customized
to steppers, scanners and ASML tools are available in this interface. |
Working with the
"Focus" results of a Weir PW Focus analysis is simple. After the Focus-Bossung
analysis just described is completed, select the "BestFocusData"
worksheet from the Data Sheet combo-control located in the upper right corner
of the workbook. You can see this control in figures 1,5 & 7. The new data
will load and your interface will switch back to the first "Data Selection" tab.
The new BestFocus data
contains four Focus-Metrics for each variable analyzed in the previous section:
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The Feature Size
at Best Focus for each site.
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The Focus-Errors
for each site
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The calculated
Depth-of-Focus (DoF) for each.
A field of data will
be included for each exposure-dose location representing the above variable's
response to dose at
Best Focus as shown in figure 7. In this figure the focus variation across each
exposure-dose-field is plotted.
You can create the
graph of figure 7 by selecting the 2nd
"Spatial" analysis tab at the top of the interface to bring up the interface shown. To obtain
this wafer-contour graph showing the best focus for each dose select the
"Contour" option button and then the "Wafer" tab and the graph of figure 7 will
be created. By changing the variation selection, at the top center combo
control, the feature size variation with focus contributed errors removed
can be plotted as well as the resulting Depth of Focus at each dose.
In figure 7 the
Dose ranges from 19 mj/cm2 in the left-most field up to 25 mj/cm2 on the right.
We could also have restricted the data to selected dosages using the "Data
Selection" interface of figure 1.

To view only the focus
errors at 22 mj/cm2, as shown in figure 8, cull the other fields by using the
Display Selection interface of tab 1 or by using the left-mouse button to box the
unwanted data and selecting one of the cull options from the popup menu. You can
reinstate any culled data by either using the mouse or data-selection
interfaces. Next create the graph of figure 8 by selecting the BCDv_Focus variable and pressing the
"Field" tab to the left of the graphic region.
You
can also view the BCDv Feature Uniformity by similarly plotting the BCDv variable to
obtain the plot on the left size of figure 8. This BCDv contour differs from the
raw data in that all of the focus-contributed errors have been removed. This
plot therefore only contains reticle errors and those contributed by the lens
and electro-optical assemblies of the exposure tool. See the
SPIE ML06 6152-109 publication for greater detail and theory.

Finally we can view
the influence of OPC reticle design and it's interaction with the lens system by
examining the Depth-of-Focus Uniformity across the field. Figure 9 shows the
uniformity for the 22 mj/cm2 exposure dose.
Modeling Focus
with the ASML and other Models of Weir PSFM
Return to the Weir
Main interface and select the Weir PSFM Analysis Uniformity interface. The "RawFocus"
datasheet will automatically load and any of four separate models can be applied
to the focus variables.
Weir PW Hints on Usage
Moving to Other
Weir Interfaces
Weir program
interfaces work interactively. You can move from Weir Main to any of the
other five interfaces using the button-bar keys or the menu. Data is
automatically transferred between interfaces. Any interface can load and, using
the Weir Layout Library, configure exposure layouts for the arrays. Only the
Weir Main interface can create Layout and Reticle Library Entries and Macros for
the Weir Daily Monitor and DMA programs.
Interrupting
Processing
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The "ESC" key will
interrupt any processing if it is held depressed.
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Weir Reports can
be saved to any website. To save the report, open it's spreadsheet in Excel
and select the "File/SaveAs" menu. When the pop-up interface appears, select
the "Web (htm,html)" format.
Graph
Customization
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Graphs are
easily copied using the Edit Menu selections, the button bar and by
boxing-in a section of any plot with the mouse.
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To edit titles,
rescale graphs, and add box-plots, trend-lines and fitted curves, right
click on the graph and use the Graphic-Editor interface.
SpreadSheet
Control
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A "Spreadsheet" menu
is located near the top right-hand corner of the Weir program interfaces. It
will be listed as the name of the loaded Weir Workbook. The menu shown in
figure 3 is using the name "KLA_SAMPLE.XLS".
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Clicking on any
spreadsheet menu will bring it to the forefront in the Excel Workbook.
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Selecting the
"Delete Worksheet" submenu will open an interface that will interactively
allow multiple worksheets to be deleted from the workbook.
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An "Index"
worksheet positioned at the 3rd tab of the Weir Data workbook lists and links all of
the worksheets created for data, reports and analysis summaries.
Automation
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This entire
analysis sequence can be automated to two-clicks of the mouse using
Weir DM and Weir Automation Macros.
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Weir DMA provides an external program portal for non-interactive
analysis by Advance Process Control and Factory Automation programs.
TEA Systems offers
products to model films, photomasks, wafers, feature profiles, process and lens data for characterization and
setup of semiconductor design, simulators, tools and the process.
TEA
Systems, a privately held corporation since 1988, specializes in advanced, intelligent
modeling of the semiconductor process and toolset. Products from TEA allow the
user to decouple process, tool and random perturbations for enhanced process
setup & control.
TEA Systems products include:
Weir PSFM:
Full-wafer/field/scan analysis tool for FOCUS derived from proprietary
defocus sensitive features.
Weir PW:
Reticle/Full-wafer/field/scan analysis for any metrology
with advanced
process window capabilities for both wafer and photomask control.
LithoWorks PEB: A tool to link and correlate profile, film and critical
element control to thermal reactions such as PEB and ChillPlate
Weir DMA: Macro Automation interface for Weir PSFM and Weir PW
for external program calling, automated data gathering or one-button analysis of
commonly used sequences. Includes data trending and web interface.
[1]
J. W. Bossung, “Projection Printing Characterization”, Developments in
Semiconductor Microlithography II, Proc. of
SPIE(1977) Vol. 100, pp. 80-84
[2]
T.A. Brunner, “New
focus metrology technique using special test mask”, OCG Interface ’93, Sept. 26,
1993, San Diego, CA. Reprinted in Microlithography World, 3 (1) (Winter 1994)
* Excel is a trademark of
Microsoft Corporation
* KLA is a tradename of KLA
Instruments
* ASML is a tradename of ASM
Lithography
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