Are you able to efficiently use the new metrics of film thickness, side-wall angle, profile and focus? These are all variables familiar to us but never before have they been provided so abundantly and in so many formats!
A decade ago many lithographers addressed the needs of production and process development with little or no automated metrology. Today itís common to have up to six or more types of metrology tool available for providing the raw data needed to control operations and adjust for product or process changes.
Lithographers work in an industry that has lived by the precepts of statistical control. Dwindling operational margins are now driving process control functions deeper into simulation and modeling in order to understand the sources of variation, anticipate corrections and optimize matching characteristics.
New imaging controls such as variable Numeric Aperture, Partial Coherence, active lens stacks and control of scan, platen, chuck and optics tilt allow the engineer to fine tune stepper and scanner performance as never before. Yet, these new tools also contribute unexpected interactions in the Focus Budget, Aberrations and Distortions present in lithography.
This next decade will require the lithographer to clearly understand key areas in:
1. Data gathering technology for feature profiles, overlay, focus and aberrations and the interactions of each metric for tool and process control.
2. Metrology and exposure tool setup, tuning, calibration and matching.
3. Lens distortions that influence imaging and multiple tool matching.
4. Focal plane aberrations and their influence on critical imaging controls.
5. The influence of the process and the reticle on aberration and production control.
6. The metrology-tool technology used in data gathering and methods of evaluating how closely itís limitations lie relative to the margins of the process.
7. The requirements for uniformity of the PEB process both during transition and dwell.
This course addresses advanced techniques for production control and tool characterization/ matching using focus, overlay and feature profile models. Models and their interactions for metrology, aberrations, process window and distortions will be addressed. Through theory, statistics and real data examples we will consider when to apply each as well as the advantages and potential pitfalls of the each technique.
The course will address and develop process, metrology and spatial models to measure these interactions from a process control standpoint using classic metrics such as overlay and new techniques in focus, scatterometric and CD-SEM data implementation.
Afterwards you will be able to:
n Define the strengths and pitfalls of CD-SEM, optical, scatter and ellipsometric automated metrology.
n Understand the similarities, differences, strengths and weaknesses of various focus measurement techniques.
n Correlate thermal maps with critical feature modeled results and model their behavior.
n Apply spatial models to derive process, toolset, metrology and wafer contributed perturbations.
n Define and measure the influence of various aberration classes on the film, profile, process window, overlay and Critical Dimension performance.
n Describe the similarities and differences of machine tuning, control and matching.
n Classify potential process error sources in terms of tunable machine subassembly algorithms.
n Measure the contribution of site dependent, lens, slit, scan and metrology error sources in your equipment set.
n Define optimum machine models for your equipment set and identify their tuning critical components.
n Quantitatively compare system performance between steppers and scanners for process control, process setup and tool matching.
n Implement optimum model, data and equipment validation techniques for production control parameters.
Who should Attend? This course is intended for experienced engineers in lithography, process, tool characterization and control. Attendees should possess a good understanding of Optics and Lithography. Some familiarity with data gathering from overlay, scatterometry and CD-SEM techniques is assumed.