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News and Press Releases

May 1, 2008

VR Matching - new and unique product from TEA Systems

A new approach for process setup and control. VR Matching provides easy analyze of process response using Side-by-Side Comparison as well as Difference/Subtraction of any characterization or performance data.  Data in the reference and match datasets do not need to be from the same metrology recipe, target or site location.

Applications include CD, Film Thickness control issues, Process Window centering & extrapolation without models, Focus Uniformity, Reticle Haze, Double-Patterning, heating and PEB problem resolution.

October 2, 2007

Vector Raptor - new Model Editor Interface

Vector Raptor overlay and registration software now is supported by a new Model Editor interface. Wafer and Field-directed models are stored in Microsoft Excel based libraries. Users can modify, edit, create and delete models using both Cartesian as well as Radial Based coordinates.

Sept 24,2007

Vector Raptor - DPL & Overlay Simulation and Lot Correction Optimizer

New features for Vector Raptor software.

Sept 18,2007

"Rapid and precise monitor of reticle haze", BACUS SPIE 2007 (Vol 6730-46)

The most commonly reported effect of haze is a gradual loss in transmission of the reticle that results in a need to increase the exposure-dose in order to maintain properly sized features.  However haze and lens film depositions will influence the feature profile and lens-aberration signature long before transmissions losses are noted. This results in early yield loss in the process.

July 1, 2007


July 1, 2007






















Getting Started

New product manual for TEA systems products. This short manual details the methods of product installation, license management, loading data, performing the first analysis, data culling and graph editing.


Vector Raptor - Double Patterning Focused; New Product Release

July 1, 2007 announcement of the release of a new and unprecedented software product that enhances the control of overlay and registration in advanced semiconductor manufacturing to minimize it's influence on critical feature dimensions and yield.


"Tuned reticle enhancements optimized for process response" Semiconductor FabTech Article

A method of extracting the systematic component of each featureís design-iteration is derived providing the ability to quantify the specific OPC response sensitivity to changes in the exposure and process films as well as drift introduced by the tools of the exposure set. Semiconductor FabTech Vol. 33 Q1 2007


Control of DUV Reticle Haze and Lens Contamination

TEA Systems Announces the release of a new, precise and cost effective Weir PW capability for yield control in sub-65 nm node lithography. This release marks the completion of the development of the industry's first toolset to employ metrology and advance Process Behavioral ModelsTM for the prevention of production yield loss due to the gradual build-up of chemically-deposited haze on the reticle or final lens of the scanner in Deep Ultra-Violet (DUV) exposure environments.


SPIE 2007: Process Bias, it's relation to MEEF and the new BEEF

Bias is shown to exhibit the anticipated systematic variation with exposure. Variations across each field-of-exposure are stable and behave nonlinearly within the range of the process-space. A model is developed that allows the Bias response to be comparatively measured for each mask feature-design that characterizes the behavior at optimum exposure and each featuresí stability across process-space.

The Static Bias variation across the exposure field of a reticle is inversely related to the dose-uniformity map needed to achieve uniform features at the target size. A new metric is introduced to provide a means of modeling the non-linear Bias Signature for IntraField perturbations as the Bias Error Enhancement Function (BEEF). 


SPIE 2007: Paper on a Method for Extracting OPC Response

A Process Behavior Model methodology is presented for the analysis of feature profiles and films to derive the relative robustness of response for alternative OPC designs. Several different, 70 nm OPC designs are compared for their response stability to process fluctuations. The optimal process corrections on the reticle are shown to be dependent upon the final image size at some optimal exposure point and itís ability to maintain feature size.  The failure of the classic Process Window analysis to anticipate or provide corrective insight for performance improvement under these conditions is illustrated.


First toolset for Precise Process Behavioral ModelsTM of reticles for wafer-fab specific perturbations in sub-65 nm node lithography

A new and revolutionary capability for quickly achieving and maintaining high performance device yields was introduced today when TEA Systems Corporation announced the development of the industry's first toolset for the precise optimization of photomask reticles tuned for robustness to fab-specific processes.


FujiFilm Interface2006: Full sub-65 nm data modeling for Photomask Manufacturing & wafer-process links

TEA Systems presents a new method for a comparative characterization of advanced reticle structure design based upon their response to a wafer-facilities specific set of tool and process interactions. Wafer Bias of the reticle-to-wafer sequence is derived and used as the variable for this analysis. This technique advances beyond the classic methods of process window calculation by applying multi-layered physical response models that deconvolve perturbation signatures of the tool sets and processes involved in imaging the reticle on the wafer.

Release of Weir Software Suite version 4.0.

Three years in the testing with selected customers. Weir 4.0 is the first industry wide release of a package designed to provide the missing link between design, production and testing.


SPIE 2006 Paper on Extended Bossung Analysis for OPC and process

New techniques in modeling features to control true RET performance.


SPIE 2006 Paper on rapid local modeling of MEEF for OPC control

A new way to Model MEEF variation across the exposure fields and wafer for OPC qualification and tuning.


SPIE 2006 SC 621 Short Course from TEA Systems


TEA Systems New Web Site

There's no better way to illustrate a new set of products than by showing their capabilities on a new web site.


Weir PW 4.0 pre-Release

Now you can validate Simulation and Design-for-Manufacturing links to empirical data; Qualify toolsets through full-field reticle & process validation; perform additional full-wafer/full-field advanced focus derivations, depth-of-focus and perturbation source deconvolution

Weir Qualification and Process Control software for reticle qualification. Weir PW with Weir DMA provides both automated reticle qualification in semiconductor reticle or wafer fabrication and process control with the removal of reticle signatures


Weir DMA Release

Automation for any metrology - Model based characterization and control interface for process stability.


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