New product manual for TEA systems products. This short manual
details the methods of product installation, license management, loading data,
performing the first analysis, data culling and graph editing.
Vector Raptor - Double Patterning
Focused; New Product Release
July 1, 2007 announcement of
the release of a new and unprecedented software product that enhances the
control of overlay and registration in advanced semiconductor manufacturing to
minimize it's influence on critical feature dimensions and yield.
enhancements optimized for process response"
Semiconductor FabTech Article
of extracting the systematic component of each featureís design-iteration is
derived providing the ability to quantify the specific OPC response sensitivity
to changes in the exposure and process films as well as drift introduced by the
tools of the exposure set. Semiconductor
FabTech Vol. 33 Q1 2007
Control of DUV Reticle Haze and
TEA Systems Announces
the release of a new, precise and cost effective Weir PW capability for yield
control in sub-65 nm node
lithography. This release marks the completion of the development of the industry's first toolset
to employ metrology and advance Process Behavioral ModelsTM
for the prevention of production yield loss due to the gradual build-up of
chemically-deposited haze on the reticle or final lens of the scanner in Deep
Ultra-Violet (DUV) exposure environments.
SPIE 2007: Process Bias, it's relation to MEEF and the new BEEF
Bias is shown to exhibit the anticipated
systematic variation with exposure. Variations across each field-of-exposure are
stable and behave nonlinearly within the range of the process-space. A model is
developed that allows the Bias response to be comparatively measured for each
mask feature-design that characterizes the behavior at optimum exposure and each
featuresí stability across process-space.
The Static Bias variation across the
exposure field of a reticle is inversely related to the dose-uniformity map
needed to achieve uniform features at the target size. A new metric is
introduced to provide a means of modeling the non-linear Bias Signature for
IntraField perturbations as the Bias Error Enhancement Function (BEEF).
Paper on a Method for Extracting OPC Response
A Process Behavior Model methodology is
presented for the analysis of feature profiles and films to derive the relative
robustness of response for alternative OPC designs. Several different, 70 nm OPC
designs are compared for their response stability to process fluctuations. The
optimal process corrections on the reticle are shown to be dependent upon the
final image size at some optimal exposure point and itís ability to maintain
feature size. The failure of the classic Process Window analysis to anticipate
or provide corrective insight for performance improvement under these conditions
toolset for Precise Process Behavioral ModelsTM of
reticles for wafer-fab specific perturbations in sub-65 nm node lithography
A new and revolutionary capability for
quickly achieving and maintaining high performance device yields was
introduced today when TEA Systems Corporation announced the
development of the industry's first toolset for the precise
optimization of photomask reticles tuned for robustness to
Interface2006: Full sub-65 nm data
modeling for Photomask Manufacturing & wafer-process links
presents a new
method for a comparative characterization of advanced reticle
structure design based upon their response to a wafer-facilities
specific set of tool and process interactions.
Wafer Bias of the reticle-to-wafer sequence is derived and used as
the variable for this analysis.
This technique advances beyond
the classic methods of process window calculation by applying
multi-layered physical response models that deconvolve perturbation
signatures of the tool sets and processes involved in imaging the
reticle on the wafer.
Release of Weir Software Suite version 4.0.
years in the testing with selected customers. Weir 4.0 is the first
industry wide release of a package designed to provide the missing
link between design, production and testing.