| Now you can take advantage of the depth and breadth of experience of TEA Systems. TEA Systems engineers will combine their background and expertise with the unique family of Weir and LithoWorks software to solve your problems in areas such as tool matching, acceptance, control, characterization, process setup and metrology. You get more than a report. TEA Systems will work with you to define a problem, extract the data, visualize the causes, optimize and correct the problem and confirm your process improvement. TEA Systems will even teach you how to perform future studies in-house using our unique software toolset. The TEA Systems approach to your solution is unique because of the breadth of experience of the principals. Multi-discipline solutions and analysis combine to root-out the systematic causes of yield and performance loss and provide yield-enhancing corrections to your process. With over 36 years in multi-discipline problem solving, TEA Engineers will deliver guaranteed solutions for your ramp-up, yield improvement or capabilities limit analysis needs. Typical Studies Requested Reticles & Photomasks | Feature size extraction from wafer profile and SEM data | Bow and Distortion analysis | Heating Distortion | OPC Qualification | Design qualification for process window | Full-field Process Window Tolerance | Proximity feature response | Full-field Dose Response | Dose sensitivity uniformity | Isofocal surface calculation | Etch and process uniformity | Etch, profile and film uniformity | | Semiconductor & Flat Panel | Link process to electrical test results. | Reticle, process & yield model correlations | Substrate and field systematic response | Metrology Tool Calibration | Process Bias Control | Forbidden Pitch Evaluation | Tool matching for overlay and feature-size control | Process Window capability | Bake characterization (PEB, Chill-Plate etc.) | Line-edge roughness sensitivities | Focus Uniformity | Focus-error measurement comparisons | Data source performance comparison | Spatial Error Modeling | Lithography cell matching | ARC Evaluations | Process Setup | Edge-Bead analyses | Dose uniformity and response | Depth-of-Focus uniformity mapping | Exposure-Latitude uniformity | Reticle scan systematic error analysis | Lens perturbation analysis | Alignment capability study | Wafer stage perturbation study | Correlation of empirical and simulation data | Simulation constant derivations | | Specialty Analyses | Flat-Panel, FOCAL, ASML Log File, NIKON Data logs, Z-spin, On-Wafer, Sensarray, Ellipsometry, PSFM, PGM, Red-Blue data, Matching, ECD, and many others. |
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ã Copyright 2006 TEA Systems Corporation 65 Schlossburg St., Alburtis, PA 18011 All rights reserved. Legal FOCAL, ASML, Red-Blue data are trademarks of ASM Lithography Z-spin is a trademark of CANON Inc. PGM is a trademark of Toshiba Inc. PSFM is a trademark of Benchmark Technologies |