Semiconductor data modeling for tool, process and yield




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Critical Feature Analysis

There was a time when Critical Dimension control was simply defined as the uniformity of feature widths measured across the field, wafer or lot.

The new metrology platforms vary from optical scatter, ellipsometer to Scanning Electron Microscopes (SEMís). These new tools measure not only critical feature width at multiple thresholds and accelerating voltages but also provide 3-D images of structure profiles; even edge roughness and film stack uniformity.

Today, data sets encompassing over 10,000 measurements on a single wafer are appearing. Their analysis exceeds the capabilities of classic statistics if the user wishes to validate the metrology and derive tool and process control elements from the data. Weir PW's empirical models for spatial feature distribution provide the best means of controlling the process in this new paradigm.

Select a product solution according to your needs below or directly click on a product name on the lower-right for more information.


By Solution


  • Critical Feature Analysis

    • Weir PW
    • Automated and Interactive Data Culling
    • Data sub-set selection tools
    • Metrology tool and algorithm validation
    • Metrology variable covariance calculation
    • Process and tool precision calculation
    • Error-budget and yield loss automated analyses.
    • Advanced critical feature spatial-control models for wafer, field, lens-slit and reticle-scan.
    • Across-field Depth-of-Focus modeling
    • Best Focus and optimal feature size modeling
    • Field signature Dose uniformity analysis and multi-system matching.
    • Process Window Analysis for any combination of features and all sites within the exposure field.
    • Weir DM / Weir DMA (Automation)
      • Incorporate any of the above applications into a custom Weir Macro.
      • Call Weir DMA from factory control software or any APC or other software for automated  process control.
      • Output data to Internet sites in HTML format or to other programs in ASCII or Weir Spreadsheet formats.
  • Overlay & Registration Control

  • Focus Control

  • Post Exposure Bake

  • Reticle Analysis

  • Tool Characterization

  • Metrology

  • Process Setup & Control


Weir PW
Process window, metrology and spatial feature modeling.



Focus analysis from commercial patterns and programs.



Weir DMA
Trend charts and automated analyses of raw or modeled data.



Vector Raptor
Overlay and Registration for Double Patterning



LithoWorks PEB
Thermal wafer analysis PLUS correlation to feature profile.

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