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Exposure Tool Characterization

Exposure tools combine the best and the worst of optical, mechanical and control technologies. A clear, vendor-independent understanding of each tool's behavior and strengths is key  to their control and your profits.

Whether it be for new tool acceptance, periodic maintenance or on-going process stability control, the exposure tool is the most critical and expensive station in semiconductor manufacturing. Excellence in all of these areas derives benefits from two very critical commodities; capacity and yield.

Select a product solution according to your needs below or directly click on a product name on the lower-right for more information.

 

 

 

 

By Solution

Products

  • Overlay & Registration Control

  • Critical Feature Analysis

  • Focus Control

  • Post Exposure Bake

  • Reticle Analysis

  • Tool Characterization

    • Weir PW (feature & process window models)
      • Calculate travel, alignment, stage, wafer, lens-slit, and reticle-scan precision and their contributions to feature distortion.
      • Remove measured field or reticle-library elements from raw or modeled data for enhanced exposure tuning and scan-and-slit performance mapping.
      • Calculate classic lens aberrations through their influence on feature size.
      • Model feature uniformity and process window characteristics across the entire field.
      • Model substrate layer, BARC, swing curve etc. behavior and their influence on the critical feature characteristics.
      • Model exposure tool sensitivity to wafer-edge and field-edge aberrations.
      • Model exposure-dose uniformity across the scan region.
      • Map the influence of wafer flatness and film uniformity on features.
      • Derive reticle-scan and wafer-stage direction contributions to feature perturbations.
      • Calculate the influence of lens and reticle heating during exposure.
      • Extract exposure-tool specific process window capabilities and how they vary across the entire exposure field.
      • Derive across-lens and reticle-scan focus-uniformity from critical feature data.
      • Map depth-of-focus uniformity across the exposure field for any feature.
      • Simulate tool performance for full-wafer extrapolation
      • Simulate feature uniformity improvements from control and tuning corrections.
      • Estimate reticle feature variations from wafer based metrology.
      • Determine the contribution of metrology and substrate to the process window calculation and automatically compensate for a improved calculations.
    • Weir PSFM (Focus)
      • Map aerial image, focal plane uniformity
      • Model whole–wafer autofocus stability
      • Map wafer flatness and derive the influence of substrate films on autofocus sensitivity.
      • Model lens-slit and reticle-scan static and dynamic performance signatures.
      • Extract wafer-edge and edge-bead effects.
      • Calculate classic lens aberrations through their influence on feature focus.
    • LithoWorks PW (Advance Process Window Models)
      • Map aerial image, focal plane uniformity
      • Perform ALL classic process window calculations for depth-of-focus, optimum focus/dose and exposure latitude for any number of critical features.
      • Model process window calculations for selected or all sites across the exposure field.
      • Compare exposure tool-to-tool process window characteristics for full-field matching.
    • Weir DM / Weir DMA (Automation)
      • Incorporate any of the above applications into a custom Weir Macro.
      • Call Weir DMA from factory control software or any APC or other software for automated  process control.
      • Output data to Internet sites in HTML format or to other programs in ASCII or Weir Spreadsheet formats.
  • Metrology

  • Process Setup & Control

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Weir PW
Process window, metrology and spatial feature modeling.

 

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Weir PSFM
Focus analysis from commercial patterns and programs.

 

 

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Weir DMA
Trend charts and automated analyses of raw or modeled data.

 

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Vector Raptor
Overlay and Registration for Double Patterning

 

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LithoWorks PEB
Thermal wafer analysis PLUS correlation to feature profile.

 

 

 

 
  
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