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Overlay Control

Overlay and Registration Control for Double Patterning is critical for sub-64 nm feature-size devices. TEA Systems' products provide both overlay control and feature-size control to quantify the effects of Double-Patterning Errors.

The product features that qualify these products for double-patterning also provide precise and easy-to-use aids for the evaluation of the relative performance of test-mark designs

Double Patterning of two or more layers to achieve a single device-layer embodies new sources of registration error. Reticle-library errors such as patter-to-mark offsets, reticle processing and reticle exposure drift variations all contribute now to IntraField overlay/registration and therefore Feature-Size errors.

             Left:      Modeled overlay for Double Pattern without field offset

             Center: Rotation showing separate Lens-Slit and Field Rotation components

             Right:    Contour of X-registration for Trapezoid & Wedge Errors

 

Select a product solution according to your needs below or directly click on a product name on the lower-right for more information.

 

By Solution

Products

  • Critical Feature Analysis

  • Overlay, Registration & Double Patterning

    • Vector Raptor

      • Advanced Model applications using TEA Systems proprietary adaptive modeling tools.
      • Exposure Tool corrections
      • Import ANY overlay or registration data
      • Import ANY metrology data (in addition to overlay data)
      • Comparative performance tools
      • Precision analysis
      • Covariance tools
      • Deconvolve error sources of the reticle, metrology, process and exposure tool
    • Weir PW
    • Automated and Interactive Data Culling
    • Data sub-set selection tools
    • Metrology tool and algorithm validation
    • Metrology variable covariance calculation
    • Process and tool precision calculation
    • Error-budget and yield loss automated analyses.
    • Advanced critical feature spatial-control models for wafer, field, lens-slit and reticle-scan.
    • Across-field Depth-of-Focus modeling
    • Best Focus and optimal feature size modeling
    • Field signature Dose uniformity analysis and multi-system matching.
    • Process Window Analysis for any combination of features and all sites within the exposure field.
    • Weir DM / Weir DMA (Automation)
      • Incorporate any of the above applications into a custom Weir Macro.
      • Call Weir DMA from factory control software or any APC or other software for automated  process control.
      • Output data to Internet sites in HTML format or to other programs in ASCII or Weir Spreadsheet formats.
  • Focus Control

  • Post Exposure Bake

  • Reticle Analysis

  • Tool Characterization

  • Metrology

  • Process Setup & Control

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Weir PW
Process window, metrology and spatial feature modeling.

 

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Weir PSFM
Focus analysis from commercial patterns and programs.

 

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Weir DMA
Trend charts and automated analyses of raw or modeled data.

 

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Vector Raptor
Advanced overlay and registration control with user-defined models

 

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LithoWorks PEB
Thermal wafer analysis PLUS correlation to feature profile.

  
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