Semiconductor data modeling for tool, process and yield




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Process Setup and Control

Process Window best focus and dose are determined by evaluating the region of the critical dimensionís magnitude function as a function of focus and dose.

Advanced Process Control models the conjugate regional response of multiple features to focus and dose.

Is this really enough for your process? What about the tool you select for the evaluation? If you take data from one area of the lens will that process window be representative of all other points in the exposure field of the lens? Will the area truly be representative of all other exposure tools in the facility even if the are the same model?

How dose dose uniformity, lens aberrations and reticle scan characteristics influence the optimum setting for the process? Should critical layers be matched and selected for feature definition?

All these questions are addressed by TEA Systems products. Examine focus uniformity, exposure-field limited process windows, dose uniformity, Depth-of-focus contours across the lens. You can also validate optimum feature performance for new reticles entering production.

Select a product solution according to your needs below or directly click on a product name on the lower-right for more information.

Optimized for use with Optical CD tools to provide enhanced process window calculations. Full user control of graphics, dose-point, graph selection, the number and location of multiple sites on the field plus the ability to establish assymetric control limits for each feature.



Across-wafer effects can predominate the 300 mm process. View wafer-radial distributions, model full-wafer response, edge bead performance etc. Use the mouse to designate any sub-region of the waferor field to create data sub-sheets, BoxPlots and XY-graphs


By Solution


  • Overlay & Registration Control

  • Critical Feature Analysis

  • Focus Control

  • Post Exposure Bake

  • Reticle Analysis

  • Tool Characterization

  • Metrology Analysis

  • Process Setup & Control

    • Vector Raptor

      • Advanced Model applications using TEA Systems proprietary adaptive modeling tools.
      • Exposure Tool corrections
      • Import ANY overlay or registration data
      • Import ANY metrology data (in addition to overlay data)
      • Comparative performance tools
      • Precision analysis
      • Covariance tools
      • Deconvolve error sources of the reticle, metrology, process and exposure tool
    • Weir PW (feature & process window models)
      • All standard Process Window calculations and graphics including independent/simultaneous rectangular and elliptical windows
      • user-interactive dose-bias for set-point investigations.
      • Full-field process window modeling of any number of features and any number of user selected field-sites.
      • Full-field Depth-of-Focus and optimum feature shape modeling
      • Removal of wafer tilt and bow prior to modeling
      • Spreadsheet storage of data, process area calculations and summary reports.
      • User and automated data culling by statistic and any metrology quality variable such as Sigma, Mean-square-Error, Goodness-of-Fit etc.
      • Swing curve fitting from production or dose matrix data sets.
      • Thickness-loss curve fitting and mapping for any focus/dose matrix and fixed focus production sets.
      • Film uniformity monitors and mapping against critical dimension/feature data.
      • Automated Precision calculations to determine the sources of process perturbations.
      • Covariance matrices of all variables to assist in process dependency extraction and Post-Exposure-Bake sensitivities.
      • Visual, whole-wafer and whole field mapping of process window.
      • Wafer radial and edge-bead analysis.
      • Optical Proximity Correction (OPC) and Reticle Enhancement Technique (RET) validation through models, statistics and mapping.
      • Reticle validation and feature size extraction from production reticles.
      • Exposure tool dose uniformity evaluations.
    • Weir PSFM
      • Aerial Image, full-field and wafer focus modeling
      • Wafer and photoresist flatness monitor.
    • Weir DM & Weir DMA (Automation)
      • This Daily Monitor (DM) program automates the analysis of raw, modeled and calibrated data.
      • Replicate Weir PW and PSFM analyses with two mouse-clicks on any data set
      • Automated, interactive trend charts.
      • User custom-setup of analysis sequence, current and trended selected statistics.
      • Incorporate any of the above applications into a custom Weir Macro.
      • Call Weir DMA from factory control software or any APC or other software for automated  process control.
      • Output data to Internet sites in HTML format or to other programs in ASCII or Weir Spreadsheet formats.

Weir PW
Process window, metrology and spatial feature modeling.



Focus analysis from commercial patterns and programs.




Weir DM / Weir DMA
Trend charts and automated analyses of raw or modeled data.



Vector Raptor
Overlay and Registration for Double Patterning



LithoWorks PEB
Thermal wafer analysis PLUS correlation to feature profile.


Raw-data comparison of the influence of photoresist thickness and its influence on Side-wall-angle.

Side-Wall-Angle (SWA) and Photoresist uniformity plotted as 1-D Vector plots using Weir PW and Weir  DM

Full-Field Isofocal Response and Aberration tolerance for RET

Feature "Top" width as a function of the thickness of photoresist. A process inclusive representation of the swing curve function using scatterometry.

Use Weir PW to derive swing-curves even from production data

Comparison plots of Silicide and the resulting trench depth. Measured with an ellipsometer.

Modled Silicide and Trench depth uniformity by Weir PW


Dose Response for several Periodic Structures of 120, 210 and 275 nm AFTER focus errors have been removed by Weir PW.

The lower curves of the plot show the calculated optimum focus for each structure as a function of dose.

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